• DocumentCode
    842609
  • Title

    RIE etching of deep Bragg grating filters in GaInAsP/InP

  • Author

    Cremer, C. ; Schienle, Meinrad

  • Author_Institution
    Siemens AG, Res. Labs., Munich, West Germany
  • Volume
    25
  • Issue
    17
  • fYear
    1989
  • Firstpage
    1177
  • Lastpage
    1178
  • Abstract
    An RIE (CH4/H2) process is presented for the production of up to 1 mu m-deep first-order Bragg gratings with a grating constant of Lambda =0.23 mu m in InP and GaInAsP. A Bragg grating filter on a GaInAsP/InP rib waveguide showed a stopband width as large as 5 nm at -10 dB and a nearly rectangular shape of the filter function.
  • Keywords
    III-V semiconductors; diffraction gratings; gallium arsenide; indium compounds; optical filters; sputter etching; 1 micron; RIE; deep Bragg grating filters; filter function; first-order Bragg gratings; grating constant; rectangular shape; rib waveguide; stopband width;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890789
  • Filename
    41940
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842609