Title :
RIE etching of deep Bragg grating filters in GaInAsP/InP
Author :
Cremer, C. ; Schienle, Meinrad
Author_Institution :
Siemens AG, Res. Labs., Munich, West Germany
Abstract :
An RIE (CH4/H2) process is presented for the production of up to 1 mu m-deep first-order Bragg gratings with a grating constant of Lambda =0.23 mu m in InP and GaInAsP. A Bragg grating filter on a GaInAsP/InP rib waveguide showed a stopband width as large as 5 nm at -10 dB and a nearly rectangular shape of the filter function.
Keywords :
III-V semiconductors; diffraction gratings; gallium arsenide; indium compounds; optical filters; sputter etching; 1 micron; RIE; deep Bragg grating filters; filter function; first-order Bragg gratings; grating constant; rectangular shape; rib waveguide; stopband width;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890789
