DocumentCode :
842672
Title :
Temperature distribution in GaAs lasers with diamond film heatsink
Author :
Reeves, Geoffrey K. ; Shi, S.L. ; Ong, G.T.
Author_Institution :
Microelectron. & Mater. Technol. Centre, R. Melbourne Inst. of Technol., Vic., Australia
Volume :
28
Issue :
25
fYear :
1992
Firstpage :
2317
Lastpage :
2318
Abstract :
Thermal effects in laser diodes can strongly influence their performance. The authors describe the thermal analysis of a double-heterostructure laser diode for a range of heatsink combinations. The effects of indium solder thickness and the incorporation of a thin film of diamond are illustrated for both transient and steady state cases.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heat sinks; semiconductor lasers; temperature distribution; AlGaAs-GaAs; Au-In-Au-C-Cu; GaAs substrate; diamond film heatsink; double-heterostructure laser diode; laser diodes; temperature distribution; thermal analysis;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19921491
Filename :
191849
Link To Document :
بازگشت