• DocumentCode
    842672
  • Title

    Temperature distribution in GaAs lasers with diamond film heatsink

  • Author

    Reeves, Geoffrey K. ; Shi, S.L. ; Ong, G.T.

  • Author_Institution
    Microelectron. & Mater. Technol. Centre, R. Melbourne Inst. of Technol., Vic., Australia
  • Volume
    28
  • Issue
    25
  • fYear
    1992
  • Firstpage
    2317
  • Lastpage
    2318
  • Abstract
    Thermal effects in laser diodes can strongly influence their performance. The authors describe the thermal analysis of a double-heterostructure laser diode for a range of heatsink combinations. The effects of indium solder thickness and the incorporation of a thin film of diamond are illustrated for both transient and steady state cases.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heat sinks; semiconductor lasers; temperature distribution; AlGaAs-GaAs; Au-In-Au-C-Cu; GaAs substrate; diamond film heatsink; double-heterostructure laser diode; laser diodes; temperature distribution; thermal analysis;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921491
  • Filename
    191849
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842672