Title :
A 1/3-in 410000-pixel CCD image sensor with feedback field-plate amplifier
Author :
Akimoto, Hajime ; Ando, Haruhisa ; Nakagawa, Hideki ; Nakahara, Yoshihiko ; Hikiba, Masayuki ; Ohta, Hirofumi
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
12/1/1991 12:00:00 AM
Abstract :
The design considerations and performance of a 1/3-in format 410000-pixel interline transfer charge coupled device (CCD) (IL-CCD) image sensor are described. Some techniques have been introduced in order to shrink the pixel size to 6.4(H)×7.5(V) μm without any deterioration in dynamic range and, signal-to-noise (S/N) ratio. The photodiode structure is designed to reduce the knee effect so as to avoid an overflow of the vertical CCD (V-CCD) register up to 500 times the saturating illumination. A depleted-well CCD structure is introduced to maintain the maximum charge-handling capability of 92000 electrons/packet in the V-CCD register, and high enough transfer efficiency of the horizontal CCD (H-CCD) registers with 5-Vp-p pulse driving. A feedback field-plate amplifier (FFPA) is introduced to raise the sensitivity of the output amplifier to 16.2 μV/electron in order to obtain a large enough S/N ratio to the background noise of the peripheral circuits in a video camera
Keywords :
CCD image sensors; design engineering; feedback; television cameras; video cameras; 0.333 in; 1/3-in format; 410000 pixel; 5 V; 6.4 micron; 7.5 micron; CCD image sensor; FFPA); S/N ratio; SNR; depleted-well CCD structure; design considerations; dynamic range; feedback field-plate amplifier; interline transfer CCD image sensor; knee effect reduction; maximum charge-handling capability; performance; photodiode structure; signal to noise ratio; transfer efficiency; video camera; Charge coupled devices; Charge-coupled image sensors; Dynamic range; Electrons; Feedback; Image sensors; Knee; Lighting; Photodiodes; Pulse amplifiers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
