Title :
Layout comparison of MOSFETs with large W/L ratios
Author :
Vemuru, Srinivasa R.
Author_Institution :
Dept. of Electr. Eng., City Coll. of New York, NY, USA
Abstract :
Theory is developed on the layout of MOSFETs with large W/L ratios. Different layout styles are also compared for the performance criteria such as area, gate capacitance, drain (source) capacitances and gate resistances. The waffle iron layout style is superior to conventional finger layout in terms of area and gate resistance, whereas finger layout has lower gate capacitance.
Keywords :
MOS integrated circuits; capacitance; circuit layout; insulated gate field effect transistors; linear integrated circuits; MOSFETs; analogue circuit design; area; drain capacitance; finger layout; gate capacitance; gate resistances; large width to length ratio; layout styles; source capacitance; waffle iron layout style;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921498
