• DocumentCode
    842852
  • Title

    35 GHz ft and 26 GHz fmax GaInP/GaAs heterojunction bipolar transistors

  • Author

    Prasad, S.J. ; Haynes, C. ; Vetanen, B. ; Park, Soojin ; Beers, I.

  • Author_Institution
    Electron. Res. Labs., Tektronix, Beaverton, OR, USA
  • Volume
    28
  • Issue
    25
  • fYear
    1992
  • Firstpage
    2341
  • Lastpage
    2343
  • Abstract
    High gain ( beta =175)3*10 mu m2 GaInP/GaAs HBTs fabricated using a triple mess etched non-selfaligned process are reported. The devices show a current gain of 46 even at a collector current of 1 mu A. Microwave measurements indicate the devices have 35 GHz ft and 26 GHz fmax.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 1 muA; 26 GHz; 35 GHz; EHF; GaInP-GaAs; HBTs; SHF; collector current; heterojunction bipolar transistors; non-selfaligned process; triple mess etched;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921509
  • Filename
    191866
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842852