On-Chip Characterization of Single-Event Transient Pulsewidths

Author

Narasimham, Balaji ; Ramachandran, Vishwa ; Bhuva, Bharat L. ; Schrimpf, Ronald D. ; Witulski, Arthur F. ; Holman, William Timothy ; Massengill, Lloyd W. ; Black, Jeffery D. ; Robinson, William H. ; McMorrow, Dale

Author_Institution

Vanderbilt Univ., Nashville, TN

Volume

6

Issue

4

fYear

2006

Firstpage

542

Lastpage

549

Abstract

A new on-chip single-event transient (SET) test structure has been developed to autonomously characterize the widths of random SET pulses. Simulation results show measurement granularity of 900 ps for a 1.5 mum technology and also indicate that the measurement granularity rapidly scales down with technology. Laser tests were used to demonstrate circuit operation on test chips fabricated using a 1.5 mum process. The experimental results indicate pulsewidths varying from about 900 ps to over 3 ns as the laser energy was increased

Keywords

CMOS digital integrated circuits; integrated circuit testing; system-on-chip; 1.5 micron; CMOS; measurement granularity; on-chip characterization; radiation hardening by design; single event upset; single-event transient pulsewidths; Circuit testing; Clocks; Distortion measurement; Error analysis; Frequency; Logic; Pulse measurements; Semiconductor device measurement; Space vector pulse width modulation; Voltage; CMOS; radiation hardening by design (RHBD); single event; single event upset (SEU); single-event transient (SET); transient pulsewidth;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2006.885589

Filename

4020249