• DocumentCode
    842929
  • Title

    Very low threshold current 1.3 mu m InAsyP1-y/InP BH strained-layer quantum well laser diodes grown by MOCVD

  • Author

    Kasukawa, A. ; Iwai, N. ; Namegaya, T. ; Kikuta, T.

  • Author_Institution
    Yokohama R&D Labs., Furukaw Electric Co. Ltd., Japan
  • Volume
    28
  • Issue
    25
  • fYear
    1992
  • Firstpage
    2351
  • Lastpage
    2353
  • Abstract
    Very low threshold current operation of all MOCVD grown buried heterostructure 1.3 mu m InAsP/InP strained-layer double quantum well laser diodes is reported for the first time. A very low CW threshold current of 1.8 mA was obtained in a HR coated 200 mu m-long device. The maximum CW operating temperature was 120 degrees C with a characteristic temperature of 62 K in the temperature range 20-60 degrees C.
  • Keywords
    III-V semiconductors; indium compounds; laser transitions; semiconductor lasers; vapour phase epitaxial growth; 1.3 micron; 1.8 mA; 120 degC; 20 to 60 degC; 200 micron; CW threshold current; MOCVD; buried heterostructure; double quantum well; high reflective coating; laser diodes; low threshold current; maximum CW operating temperature; semiconductor lasers; strained-layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921515
  • Filename
    191872
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842929