• DocumentCode
    842952
  • Title

    Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor

  • Author

    Plana, R. ; Graffeuil, J. ; Delage, S.L. ; Blanck, H. ; di Forte-Poisson, M.A. ; Brylinski, Christian ; Chartier, E.

  • Author_Institution
    CNRS, Univ. Paul Sabatier, Toulouse, France
  • Volume
    28
  • Issue
    25
  • fYear
    1992
  • Firstpage
    2354
  • Lastpage
    2356
  • Abstract
    The first characterisation of the low frequency noise performances of nonpassivated selfaligned GaInP/GaAs heterojunction bipolar transistors (HBT) is reported. The observed low frequency noise is smaller than for more classical GaAlAs/GaAs HBTs and is attributed to a reduced trap concentration at the GaInP/GaAs heterointerface.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; random noise; semiconductor device noise; 1/f noise; GaInP-GaAs; HBT; LF noise performance; characterisation; heterojunction bipolar transistor; low frequency noise; nonpassivated selfaligned device; reduced trap concentration;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921517
  • Filename
    191874
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842952