Title :
Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor
Author :
Plana, R. ; Graffeuil, J. ; Delage, S.L. ; Blanck, H. ; di Forte-Poisson, M.A. ; Brylinski, Christian ; Chartier, E.
Author_Institution :
CNRS, Univ. Paul Sabatier, Toulouse, France
Abstract :
The first characterisation of the low frequency noise performances of nonpassivated selfaligned GaInP/GaAs heterojunction bipolar transistors (HBT) is reported. The observed low frequency noise is smaller than for more classical GaAlAs/GaAs HBTs and is attributed to a reduced trap concentration at the GaInP/GaAs heterointerface.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; random noise; semiconductor device noise; 1/f noise; GaInP-GaAs; HBT; LF noise performance; characterisation; heterojunction bipolar transistor; low frequency noise; nonpassivated selfaligned device; reduced trap concentration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921517
