Inversion-Mode Self-Aligned $\hbox {In}_{0.53}\hbox {Ga}_{0.47}\hbox {As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Me

A high-performance In_0.53Ga_0.47As n-channel MOSFET integrated with a HfAlO gate dielectric and a TaN gate electrode was fabricated using a self-aligned process. After HCl cleaning and (NH₄)₂S treatment, the chemical vapor deposition HfAlO growth on In_0.53Ga_0.47As exhibits a high-quality interface. The fabricated nMOSFET with a HfAlO gate oxide thickness of 11.7 nm shows a gate leakage current density as low as 2.5 times 10^-7 A/cm² at V_g of 1 V. Excellent inversion capacitance was illustrated. Silicon implantation was self-aligned to the gate, and low-temperature activation for source and drain was achieved by rapid thermal annealing at 600degC for 1 min. The source and drain junction exhibited an excellent rectifying characteristic and high forward current. The result of an In_0.53Ga_0.47As nMOSFET shows well-performed I_d-V_d and I_d-V_g characteristics. The record high peak electron mobility of 1560 cm²/Vs has been achieved without any correction methods considering interface charge and parasitic resistance.