DocumentCode :
843248
Title :
Electromigration Studies of Cu/Carbon Nanotube Composite Interconnects Using Blech Structure
Author :
Chai, Yang ; Chan, Philip C.H. ; Fu, Yunyi ; Chuang, Y.C. ; Liu, C.Y.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Volume :
29
Issue :
9
fYear :
2008
Firstpage :
1001
Lastpage :
1003
Abstract :
The electromigration (EM) properties of pure Cu and Cu/carbon nanotube (CNT) composites were studied using the Blech test structure. Pure Cu and Cu/CNT composite segments were subjected to a current density of 1.2 times 106 A/cm2. The average void growth rate of Cu/CNT composite sample was measured to be around four times lower than that of the pure copper sample. The average critical current-density-length threshold products of the pure Cu and Cu/CNT composites were estimated to be 1800 and 5400 A/cm, respectively. The slower EM rate of the Cu/CNT composite stripes is attributed to the presence of CNT, which acts as trapping centers and causes a decrease in the diffusion of EM-induced migrating atoms.
Keywords :
carbon nanotubes; copper; current density; electromigration; integrated circuit interconnections; Blech test structure; Cu-C; Cu-carbon nanotube composite interconnects; critical current-density-length threshold; electromigration; trapping centers; void growth rate; Carbon nanotubes; Chemical elements; Conductivity; Copper; Current density; Density measurement; Electric resistance; Electromigration; Substrates; Testing; Carbon nanotube (CNT); composite; electromigration (EM); interconnect;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2002075
Filename :
4604841
Link To Document :
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