Title :
UV-Enhanced a-Si:H Metal–Semiconductor–Metal Photodetector
Author :
Khodami, Ida ; Taghibakhsh, Farhad ; Karim, Karim S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Waterloo, ON
Abstract :
Planar metal-semiconductor-metal (MSM) photodetectors with very thin hydrogenated amorphous silicon (a-Si) films were fabricated for the detection of ultraviolet (UV) radiation. Since DNA and proteins strongly absorb UV radiation, these detectors find application in DNA and protein detection. The performance of top and bottom electrode MSM structures with aluminum electrodes is compared. The measured results include a responsivity of 150 mA/W and an external quantum efficiency of 74% at a wavelength of 260 nm for the top electrode configuration at a bias of 2 V/mum and a 10-mum finger spacing.
Keywords :
DNA; biological effects of radiation; elemental semiconductors; macromolecules; metal-semiconductor-metal structures; photodetectors; proteins; silicon; ultraviolet detectors; ultraviolet radiation effects; DNA; UV radiation; aluminum electrodes; external quantum efficiency; finger spacing; hydrogenated amorphous silicon films; metal-semiconductor-metal photodetector; protein detection; ultraviolet radiation; Aluminum; Amorphous silicon; DNA; Electrodes; Photodetectors; Proteins; Radiation detectors; Semiconductor films; Silicon radiation detectors; Wavelength measurement; Amorphous silicon (a-Si); biomolecular imaging; metal–semiconductor–metal (MSM) photodetector; ultraviolet (UV) light detector;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2001634
