Electrical Characteristics of Near-Interface Traps in 3C-SiC Metal–Oxide–Semiconductor Capacitors

Author

Kong, Fred C J ; Dimitrijev, Sima ; Han, Jisheng

Author_Institution

Griffith Sch. of Eng., Griffith Univ., Nathan, QLD

Volume

29

Issue

9

fYear

2008

Firstpage

1021

Lastpage

1023

Abstract

Deep-depletion capacitance measurements on n-type 3C-SiC MOS capacitors that exhibit both field and temperature dependencies are presented and analyzed in this letter. A two-step electron-detrapping process, in which electrons first tunnel from neutral near-interface traps to interface traps and are subsequently thermally emitted into the silicon carbide conduction band, is identified as the responsible mechanism. A mathematical model is proposed for this two-step detrapping process.

Keywords

MOS capacitors; silicon compounds; wide band gap semiconductors; 3C-SiC metal-oxide-semiconductor capacitors; MOS capacitors; SiC; deep-depletion capacitance measurements; electrical characteristics; near-interface traps; neutral near-interface traps; silicon carbide conduction band; two-step detrapping process; Australia; Capacitance measurement; Electric variables; Electron traps; Impact ionization; MOS capacitors; Pulse measurements; Silicon carbide; Temperature dependence; Time measurement; 3C-SiC; Capacitance transients; MOS capacitors; near-interface traps;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2001753

Filename

4604847