Title :
Microwave ZnO Thin-Film Transistors
Author :
Bayraktaroglu, Burhan ; Leedy, Kevin ; Neidhard, Robert
Author_Institution :
Air Force Res. Lab., Dayton, OH
Abstract :
We have developed ZnO thin-film transistor design and fabrication techniques to demonstrate microwave frequency operation with 2-mum gate length devices produced on GaAs substrates. Using SiO2 gate insulator and pulsed laser deposited ZnO active layers, a drain-current ON/OFF ratio of 1012, a drain-current density of 400 mA/mm, a field-effect mobility of 110 cm2/V ldr s, and a subthreshold gate voltage swing of 109 m/dec were achieved. Devices with Ti-gate metal had current and power gain cutoff frequencies of 500 and 400 MHz, respectively.
Keywords :
current density; microwave transistors; pulsed laser deposition; substrates; thin film transistors; GaAs; SiO2; ZnO; drain-current ON/OFF ratio; drain-current density; field-effect mobility; gate insulator; gate length devices; microwave frequency operation; microwave thin-film transistors; power gain cutoff frequency; pulsed laser deposition; subthreshold gate voltage swing; Gallium arsenide; Insulation; Microwave devices; Microwave frequencies; Optical device fabrication; Optical pulses; Pulsed laser deposition; Substrates; Thin film transistors; Zinc oxide; FET; ON/OFF ratio; pulsed laser deposition; subthreshold voltage swing; thin-film transistors (TFTs); zinc oxide (ZnO);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2001635
