Title :
A new model for bipolar transistors at high current
Author :
Gu, Richard X. ; Elmasry, Mohamed I. ; Roulston, David J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
2/1/1993 12:00:00 AM
Abstract :
A model for current gain and cutoff frequency falloff at high currents for bipolar transistors is proposed. The model is based on considering that the vertical and lateral base widening occur simultaneously for a typical bipolar transistor. The results of this model successfully fit Pisces-2B simulation results
Keywords :
bipolar transistors; semiconductor device models; Pisces-2B simulation; bipolar transistors; current gain; cutoff frequency falloff; high current; lateral base widening; model; vertical base widening; Bipolar transistors; Current density; Cutoff frequency; Doping; Equations; Helium; Kirk field collapse effect; Proximity effect; Space charge; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
