DocumentCode :
843425
Title :
On the Impact of Defects Close to the Gate Electrode on the Low-Frequency 
Noise
Author :
Magnone, Paolo ; Pantisano, Luigi ; Crupi, Felice ; Trojman, Lionel ; Pace, Calogero ; Giusi, Gino
Author_Institution :
Dipt. di Elettron. Inf. e Sist., Calabria Univ., Cosenza
Volume :
29
Issue :
9
fYear :
2008
Firstpage :
1056
Lastpage :
1058
Abstract :
This letter studies the impact of defects close to the gate electrode side on low-frequency 1/f noise in the drain and gate current. Defects are selectively introduced by deposition of a submonolayer of HfO2 dielectric, which induce a large Fermi-level pinning on the gate. Contrary to the common belief that defects at the Si/SiO2 interface are the dominant effect on 1/f noise, defects at the interface and fluctuations in the poly-Si charge are also important.
Keywords :
1/f noise; Fermi level; MOSFET; crystal defects; hafnium compounds; high-k dielectric thin films; interface phenomena; semiconductor device noise; silicon compounds; SiON-HfO2-Si; defects impact; drain current; fermi-level pinning; gate current; gate electrode; high-k gate dielectrics; low-frequency 1/f noise; nMOSFET; pMOSFET; poly-silicon charge; Chemistry; Electrodes; Fluctuations; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Low-frequency noise; MOSFETs; Scattering; Semiconductor device noise; $hbox{1}/f$ noise; Fermi-level pinning; high-$k$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2001551
Filename :
4604858
Link To Document :
