Title :
A generalized tanh law MOSFET model and its applications to CMOS inverters
Author :
Shousha, A.H.M. ; Aboulwafa, M.
Author_Institution :
Dept. of Electr. Eng., United Arab Emirates Univ., Al-Ain, United Arab Emirates
fDate :
2/1/1993 12:00:00 AM
Abstract :
A generalized tanh law model is proposed to simulate the current-voltage characteristics of both long-channel and short-channel MOS transistors. The proposed model is used to calculate the propagation delay, short-circuit power dissipation, and logic threshold voltage of CMOS inverters. The results obtained are in good agreement with those obtained using classical models
Keywords :
CMOS integrated circuits; insulated gate field effect transistors; integrated logic circuits; semiconductor device models; CMOS inverters; MOS transistors; MOSFET model; current-voltage characteristics; generalized tanh law; logic threshold voltage; long-channel; propagation delay; short-channel; short-circuit power dissipation; CMOS logic circuits; Current measurement; Current-voltage characteristics; Helium; MOSFET circuits; Power dissipation; Propagation delay; Pulse inverters; Semiconductor device modeling; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
