DocumentCode
843445
Title
Comments on circuit models for MOSFET thermal noise
Author
Fox, Robert M.
Author_Institution
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Volume
28
Issue
2
fYear
1993
fDate
2/1/1993 12:00:00 AM
Firstpage
184
Lastpage
185
Abstract
It is shown that some current and proposed SPICE models for MOS thermal noise are inconsistent, either when moving from one operating region to another or when changing model levels. A different model is shown to be consistent with theory in all regions and with all SPICE model levels. The reasons for the inconsistency are explored
Keywords
SPICE; equivalent circuits; insulated gate field effect transistors; semiconductor device models; semiconductor device noise; thermal noise; MOSFET; SPICE models; circuit models; thermal noise; Circuit noise; Circuit simulation; MOSFET circuits; Noise level; Nonlinear filters; Power MOSFET; SPICE; Threshold voltage; Transconductance; Very large scale integration;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.192054
Filename
192054
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