DocumentCode :
843445
Title :
Comments on circuit models for MOSFET thermal noise
Author :
Fox, Robert M.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Volume :
28
Issue :
2
fYear :
1993
fDate :
2/1/1993 12:00:00 AM
Firstpage :
184
Lastpage :
185
Abstract :
It is shown that some current and proposed SPICE models for MOS thermal noise are inconsistent, either when moving from one operating region to another or when changing model levels. A different model is shown to be consistent with theory in all regions and with all SPICE model levels. The reasons for the inconsistency are explored
Keywords :
SPICE; equivalent circuits; insulated gate field effect transistors; semiconductor device models; semiconductor device noise; thermal noise; MOSFET; SPICE models; circuit models; thermal noise; Circuit noise; Circuit simulation; MOSFET circuits; Noise level; Nonlinear filters; Power MOSFET; SPICE; Threshold voltage; Transconductance; Very large scale integration;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.192054
Filename :
192054
Link To Document :
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