On-Resistance Degradation Induced by Hot-Carrier Injection in LDMOS Transistors With STI in the Drift Region

In this letter, on-resistance (R _on) degradation induced by hot-carrier injection in n-type lateral DMOS transistors with shallow-trench isolation (STI) in the drift region is investigated. R _on decreases at the beginning of stress, but R _on increases as the stress time is increased. Experimental data and technology computer-aided-design simulation results reveal that hot-hole injection and trapping at the STI corner closest to the channel are responsible for the R _on reduction. The damage caused by hot-electron injection at the STI edge closest to the drain is responsible for the R _on increase.