DocumentCode :
843611
Title :
Photovoltaic potential induced by 10 mu m laser radiation in Si photodiodes
Author :
Ferrari, E. Domínguez ; Sanz, F. Encinas ; Pérez, J. M Guerra
Author_Institution :
Inst. de Fisica Aplicada L. Torres Quevedo, Madrid, Spain
Volume :
1
Issue :
12
fYear :
1989
Firstpage :
469
Lastpage :
471
Abstract :
Photon drag and photovoltaic response observed in p/sup +//n and n/sup +//p silicon junctions excited by moderated-power-density 10- mu m radiation are discussed. A multistep multiphotonic process through intermediate states located within the energy gap is proposed as the mechanism responsible for the photovoltaic potential.<>
Keywords :
elemental semiconductors; infrared detectors; photodiodes; silicon; 10 micron; Si photodiodes; energy gap; laser radiation; moderated-power-density radiation; multistep multiphotonic process; n/sup +//p silicon junctions; p/sup +//n silicon junctions; photo drag; photovoltaic potential; photovoltaic response; semiconductor; Argon; Gold; Laser modes; Optical pulses; Photodiodes; Photovoltaic systems; Pulse measurements; Silicon; Solar power generation; Switches;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.46053
Filename :
46053
Link To Document :
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