A Unified Approach to Charge-Conservative Capacitance Modelling in HEMTs

Author

Kallfass, Ingmar ; Schumacher, Hermann ; Brazil, Thomas J.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ.

Volume

16

Issue

12

fYear

2006

Firstpage

678

Lastpage

680

Abstract

The voltage dependence of high electron mobility transistor (HEMT) gate-source- and gate-drain capacitance is described by a set of equations based on a unified charge-conservative model approach. The model is applied to a low-noise GaAs pseudomorphic-HEMT (pHEMT) technology as well as its power variant. In terms of topology and parameters, the new expressions resemble the Curtice drain current model. They provide a globally accurate description of nonlinearities in HEMT capacitance

Keywords

III-V semiconductors; capacitance; gallium compounds; high electron mobility transistors; semiconductor device models; Curtice drain current model; GaAs; charge-conservative capacitance modelling; gate-drain capacitance; gate-source capacitance; high electron mobility transistor; pseudomorphic-HEMT technology; semiconductor device modelling; unified charge-conservative model; Capacitance; Circuit synthesis; Electron devices; FETs; HEMTs; Integrated circuit modeling; Integrated circuit technology; MODFET integrated circuits; Nonlinear equations; Voltage; Modulation-doped field effect transistors (MODFETs); semiconductor device modelling;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.885627

Filename

4020317