• DocumentCode
    843758
  • Title

    Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

  • Author

    Blokhin, S.A. ; Lott, J.A. ; Mutig, A. ; Fiol, G. ; Ledentsov, N.N. ; Maximov, M.V. ; Nadtochiy, A.M. ; Shchukin, V.A. ; Bimberg, D.

  • Author_Institution
    Inst. of Solid-State Phys., Tech. Univ. Berlin, Berlin
  • Volume
    45
  • Issue
    10
  • fYear
    2009
  • Firstpage
    501
  • Lastpage
    503
  • Abstract
    Oxide-confined 850 nm vertical-cavity surface-emitting lasers operating at 40 Gbit/s at current densities ~10 kA/cm2 are realised. The deconvoluted rise time of the device is below 10 ps and remains hardly temperature sensitive up to 100degC.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser beams; surface emitting lasers; bit rate 40 Gbit/s; current density; deconvoluted rise time; error-free transmission; eye diagram; oxide-confined VCSEL; ultra-high speed data transmission; vertical-cavity surface-emitting laser; wavelength 850 nm;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.0552
  • Filename
    4913365
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=843758