Low-power and low NF V-band down-converter in 0.13 μm CMOS

A V-band down-converter integrating a LNA and mixer in 0.13 mum CMOS technology is presented. The LNA has a current re-use topology for low power consumption. The transistor size of the LNA is optimised by the substrate noise for the low noise figure (NF) and f _max for high gain performance. The new resistive mixer for low LO power operation is proposed. The NF of the down-converter is 4.7 dB. The conversion gain and input P _1dB are 0.67 dB and -12.5 dBm, respectively. The proposed circuit, consuming only 11.6 mW, shows the lowest NF and highest linearity among V-band down-converters.