DocumentCode :
843834
Title :
Experimental validation of PTAT for in situ temperature sensor and voltage reference
Author :
Liu, C.-P. ; Huang, H.-P.
Author_Institution :
Dept. of Mech. Eng., Nat. Taiwan Univ., Taipei
Volume :
44
Issue :
17
fYear :
2008
Firstpage :
1016
Lastpage :
1017
Abstract :
Based on the CMOS proportional to absolute temperature principle, a combined device for voltage reference and temperature sensors is successfully implemented using a fully digital process. For a temperature range from 20 to 120degC, the experimental results show that the voltage reference has a temperature stable output of 717 mV and the associated temperature sensor has the sensitivity of 2.3 mV/degC with linearity up to 95%. They are independent of the variation of supply voltage.
Keywords :
CMOS integrated circuits; integrated circuit layout; temperature sensors; thermal stability; CMOS process; PTAT current; chip layout; circuit fabrication; fully digital process; in situ temperature sensor; supply voltage variation; temperature 20 C to 120 C; temperature stable output; voltage 717 mV; voltage reference;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20080587
Filename :
4606599
Link To Document :
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