Title :
Longitudinal bandgap modulated broadband (≫150 nm) InGaAs/GaAs MQWs superluminescent diodes by selective area MOVPE growth
Author :
Morishima, Y. ; Yaguchi, J. ; Mukai, A. ; Ohgoh, T. ; Asano, H.
Author_Institution :
Frontier Core-Technol. Labs., Fujifilm Corp., Kaisei
Abstract :
The characteristics of broadband superluminescent diodes (SLDs) are presented. The longitudinal bandgap modulated InGaAs/GaAs multiple quantum wells of broadband SLDs are grown by selective area metal organic vapour phase epitaxy (MOVPE) growth. The centre wavelength was 1060 nm. The 3 dB bandwidth was 130 nm and the 10 dB bandwidth was 174 nm. The output power was 0.3 mW.
Keywords :
III-V semiconductors; MOCVD; electro-optical modulation; gallium arsenide; indium compounds; quantum well devices; superluminescent diodes; vapour phase epitaxial growth; InGaAs-GaAs; broadband MQW; longitudinal bandgap modulation; metal organic vapour phase epitaxy; multiple quantum wells; power 0.3 mW; selective area MOVPE growth; superluminescent diodes; wavelength 1060 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.2684
