GaInP/GaAs HBT Sub-Harmonic Gilbert Mixers Using Stacked-LO and Leveled-LO Topologies

Author

Wu, Tzung-Han ; Tseng, Sheng-Che ; Meng, Chin-Chun ; Huang, Guo-Wei

Author_Institution

Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu

Volume

55

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

880

Lastpage

889

Abstract

This paper discusses and demonstrates the most popular sub-harmonic Gilbert mixers in 2-mum GaInP/GaAs HBT technology. High two local oscillators (2LO)-to-RF isolation is important to alleviate the self-mixing problem of the sub-harmonic mixer. The demonstrated GaInP/GaAs HBT stacked-local oscillator (LO) mixer topology has achieved the best 2LO-to-RF isolation when compared with the previous literature. On the other hand, the leveled-LO sub-harmonic mixers have advantages in terms of the high speed and low dc supply voltage at the cost of much larger LO pumping power. Among all the structures, the bottom-LO sub-harmonic mixer has the lowest current consumption and the simplest circuit structure at the expense of the 2LO-to-RF isolation

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; gallium compounds; indium compounds; microwave integrated circuits; microwave mixers; oscillators; wide band gap semiconductors; 2 micron; DC offset; GaInP-GaAs; HBT; heterojunction bipolar transistor; leveled-local oscillator topology; local oscillators-to-RF isolation; pumping power; self-mixing; stacked-local oscillator topology; sub-harmonic Gilbert mixers; Circuits; Costs; Gallium arsenide; Heterojunction bipolar transistors; Local oscillators; Mixers; Passive filters; Radio frequency; Topology; Transceivers; DC offset; GaInP/GaAs HBT; Gilbert mixer; self-mixing; sub-harmonic mixer; two local oscillators (2LO)-to-RF isolation;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2007.895169

Filename

4195685