Title :
Intensity noise in 1.5 mu m GaInAs quantum well buried heterostructure lasers
Author :
Westbrook, L.D. ; Fletcher, N.C. ; Cooper, Diana Marina ; Stevenson, Mark ; Spurdens, P.C.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
Abstract :
Intensity noise has been measured for the first time in GaInAs quantum well lasers. The noises in quantum well and bulk lasers are found to be comparable when the resonance frequencies and lengths are made equal; consequently, for a given emitted optical power quantum well lasers have wider bandwidths and lower noise, as a result of their higher resonance frequencies.
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 1.5 micron; GaInAs; bandwidths; emitted optical power; intensity noise; quantum well buried heterostructure lasers; resonance frequencies;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890793
