DocumentCode
844480
Title
Yb-doped Ni FUSI for the n-MOSFETs gate electrode application
Author
Chen, J.D. ; Yu, H.Y. ; Li, M.-F. ; Kwong, D.L. ; van Dal, M.J.H. ; Kittl, J.A. ; Lauwers, A. ; Absil, P. ; Jurczak, M. ; Biesemans, S.
Author_Institution
Dept. of Electr. & Electron. Eng., Nat. Univ. of Singapore, Singapore
Volume
27
Issue
3
fYear
2006
fDate
3/1/2006 12:00:00 AM
Firstpage
160
Lastpage
162
Abstract
In this letter, an n-type near-band edge fully silicided (FUSI) material-Yb-doped Ni FUSI is demonstrated for the first time. By doping Yb into Ni FUSI, it is shown that while maintaining the same equivalent oxide thickness and the similar device reliability, the work function of Ni FUSI (on SiON dielectrics) could be tuned from 4.72 to 4.22 eV. Yb-doped Ni FUSI is promising for the gate electrode application in n-MOSFETs.
Keywords
MOSFET; nickel; semiconductor device reliability; work function; ytterbium; Ni:Yb; NiYbSi-SiON; Yb-doped Ni FUSI; band edge work function; device reliability; fully silicided material; gate electrode; n-MOSFET; Annealing; CMOS technology; Dielectric devices; Dielectric substrates; Doping; Electrodes; MOSFET circuits; Maintenance; Silicidation; Silicides; Band edge workfunction; Ni/Yb; fully silicided (FUSI); n-MOSFETs;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2006.870252
Filename
1599466
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