Title :
Yb-doped Ni FUSI for the n-MOSFETs gate electrode application
Author :
Chen, J.D. ; Yu, H.Y. ; Li, M.-F. ; Kwong, D.L. ; van Dal, M.J.H. ; Kittl, J.A. ; Lauwers, A. ; Absil, P. ; Jurczak, M. ; Biesemans, S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Nat. Univ. of Singapore, Singapore
fDate :
3/1/2006 12:00:00 AM
Abstract :
In this letter, an n-type near-band edge fully silicided (FUSI) material-Yb-doped Ni FUSI is demonstrated for the first time. By doping Yb into Ni FUSI, it is shown that while maintaining the same equivalent oxide thickness and the similar device reliability, the work function of Ni FUSI (on SiON dielectrics) could be tuned from 4.72 to 4.22 eV. Yb-doped Ni FUSI is promising for the gate electrode application in n-MOSFETs.
Keywords :
MOSFET; nickel; semiconductor device reliability; work function; ytterbium; Ni:Yb; NiYbSi-SiON; Yb-doped Ni FUSI; band edge work function; device reliability; fully silicided material; gate electrode; n-MOSFET; Annealing; CMOS technology; Dielectric devices; Dielectric substrates; Doping; Electrodes; MOSFET circuits; Maintenance; Silicidation; Silicides; Band edge workfunction; Ni/Yb; fully silicided (FUSI); n-MOSFETs;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.870252
