• DocumentCode
    844513
  • Title

    Reliable extraction of cycling induced interface states implementing realistic P/E stresses in reference cell: comparison with flash memory cell

  • Author

    Baek, Chang-Ki ; Bomsoo Kim ; Son, Younghwan ; Kwon, WookHyun ; Chan-Kwang Park ; Park, Young June ; Min, Hong Shick ; Kim, Dae M.

  • Author_Institution
    Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
  • Volume
    27
  • Issue
    3
  • fYear
    2006
  • fDate
    3/1/2006 12:00:00 AM
  • Firstpage
    169
  • Lastpage
    171
  • Abstract
    The cycling induced interface states in floating-gate EEPROM cells are reliably extracted by implementing accurate program/erase stresses in the reference cell. The interface states measured directly from the memory cell via charge pumping are shown different from those obtained conventionally from the reference cell. The reasons for these different levels of extraction are elucidated and a new method is presented for accurate determination of interface trap density. The technique is based on introducing the equivalent gate voltage with offset voltage at the reference cell by which to simulate realistically the cycling stresses as occur in the flash memory cell itself.
  • Keywords
    flash memories; interface states; charge pumping; cycling induced interface states; cycling stresses; flash memory cell; floating-gate EEPROM cells; interface trap density; program/erase stresses; reference cell; Capacitance; Charge measurement; Charge pumps; Current measurement; EPROM; Flash memory cells; Interface states; Nonvolatile memory; Stress; Voltage control; Charge pumping; flash EEPROM cell; interface states;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2005.864178
  • Filename
    1599469