On the generation and recovery of hot carrier induced interface traps: a critical examination of the 2-D R-D model

The generation and recovery of interface traps (N_IT) during and after hot carrier injection stress is evaluated by the recently proposed two-dimensional (2-D) reaction diffusion (R-D) model. The power law time exponent (n) of N_IT generation as well as the magnitude of fractional and absolute recovery after the stress cannot be fully explained by considering only the spatial extent of broken ≡Si-H bonds, as is done by 2-D R-D model. Additional contribution due to broken ≡Si-O bonds also plays a major role in determining the overall N_IT generation and recovery behavior.