Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing

Author

Se Yeob Park ; Ji Hun Song ; Chang-Kyu Lee ; Byeong Geun Son ; Chul-Kyu Lee ; Hyo Jin Kim ; Choi, Rino ; Yu Jin Choi ; Un Ki Kim ; Cheol Seong Hwang ; Hyeong Joon Kim ; Jae Kyeong Jeong

Author_Institution

Dept. of Mater. Sci. & Eng., Inha Univ., Incheon, South Korea

Volume

34

Issue

7

fYear

2013

fDate

Jul-13

Firstpage

894

Lastpage

896

Abstract

This letter examines the effect of oxygen (O₂) high-pressure annealing (HPA) on indium zinc oxide (IZO) thin-film transistors (TFTs) with a high-quality Al₂O₃ passivation layer. The IZO TFTs anneal under an O₂ atmosphere at 9 atm exhibits a high field-effect mobility, low subthreshold gate swing, moderate threshold voltage (Vth), and high I_ON/OFF ratio of 30.4 cm²/Vs, 0.10 V/decade, 0.79 V, and 10⁸, respectively. In addition, the O₂ HPA-treated IZO TFT has superior reliability (ΔVth= -0.5 V) to that of the 0.2-atm-annealed device (ΔVth=-3.7 V) under negative bias illumination stress conditions. This improvement can be attributed to the reduced concentration of oxygen vacancy defects in the IZO channel layer during the O₂ HPA treatment.

Keywords

annealing; field effect transistors; indium compounds; passivation; semiconductor device reliability; thin film transistors; zinc compounds; Al₂O₃; HPA treatment; HPA-treated IZO TFT; InZnO; O₂; channel layer; high field-effect mobility; high-mobility indium zinc oxide thin-film transistor; negative bias illumination stress condition; oxygen high-pressure annealing; oxygen vacancy defect; passivation layer; photo-bias stability; reliability; subthreshold gate swing; threshold voltage; voltage 0.79 V; High mobility; indium zinc oxide semiconductor; oxygen vacancy; photo-bias stability; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2259574

Filename

6522496