Title :
11.4 Gbit/s silicon bipolar multiplexer IC employing 2 mu m lithography transistors
Author :
Schreiber, H.U. ; Albers, J.N. ; Bosch, B.G.
Author_Institution :
Ruhr- Univ., Bochum, West Germany
Abstract :
A very high-speed 2:1 multiplexer IC operating up to 11.4 Gbit/s has been implemented. The circuit was fabricated using a 12 GHz non-polysilicon-emitter self-aligning bipolar process with 2 mu m lithography. Despite realisation in a relatively simple technology, this is the highest operating speed yet achieved with any technology.
Keywords :
bipolar integrated circuits; digital integrated circuits; elemental semiconductors; integrated circuit technology; multiplexing equipment; silicon; 11.4 Gbit/s; 2 micron; CD 2 micron; Si; TDM; multiplexer IC; operating speed; self-aligning bipolar process; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891126
