Title :
High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics
Author :
Shi-Jin Ding ; Hang Hu ; Lim, H.F. ; Kim, Sun Ja ; Yu, X.F. ; Chunxiang Zhu ; Li, M.F. ; Byung Jin Cho ; Chan, D.S.H. ; Rustagi, S.C. ; Yu, M.B. ; Chin, A. ; Dim-Lee Kwong
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO2-Al2O3 laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF/μm2 from 10 kHz up to 20 GHz, very low leakage current of 3.2 × 10/sup -8/ A/cm2 at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V2, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO2-Al2O3 laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.
Keywords :
MIM devices; S-parameters; alumina; atomic layer deposition; capacitance; dielectric thin films; hafnium compounds; laminates; leakage currents; thin film capacitors; 10 kHz to 20 GHz; HfO/sub 2/-Al/sub 2/O/sub 3/; S-parameters; TDDB curves; atomic layer deposition; frequency dependences; high breakdown field; high capacitance density; high performance capacitors; high-k laminate dielectric; low leakage current; metal-insulator-metal capacitors; next generation integrated circuit; temperature coefficient of capacitance; Atomic layer deposition; Breakdown voltage; Capacitance; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Laminates; Leakage current; MIM capacitors; Metal-insulator structures;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.820664
