High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO₂-Al₂O₃ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF/μm² from 10 kHz up to 20 GHz, very low leakage current of 3.2 × 10/sup -8/ A/cm² at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V², temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO₂-Al₂O₃ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.