Title :
Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs
Author :
Yu, D.S. ; Wu, C.H. ; Huang, C.H. ; Chin, Albert ; Chen, W.J. ; Zhu, Chunxiang ; Li, M.F. ; Kwong, Dim-Lee
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We have fabricated the fully silicided NiSi and germanided NiGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO/sub 2/ gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent flat band voltage were 4.55 and 5.2 eV respectively, which may provide possible wide work function tuning using NiSi/sub t-x/Ge/sub x/. In additional to the lower gate current than Al gate n- and p-MOSFETs, the fully silicided NiSi and germanided NiGe gates MOSFETs show electron and hole mobilities close to universal mobility values with special advantage of process compatible to current VLSI fabrication line.
Keywords :
MOSFET; electron mobility; hole mobility; leakage currents; nickel compounds; rapid thermal annealing; work function; NiGe; NiSi; SiO/sub 2/; VLSI process compatible; electron mobilities; fully germanided dual gates; fully silicided dual gates; hole mobilities; leakage current; lower gate current; nMOSFET; pMOSFET; thickness-dependent flat band voltage; universal mobility values; work functions; Charge carrier processes; Dielectric substrates; Electron mobility; Fabrication; Leakage current; MOSFET circuits; Silicidation; Temperature; Very large scale integration; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.819274
