Suppression of corner effects in triple-gate MOSFETs

Author

Fossum, J.G. ; Yang, J.-W. ; Trivedi, V.P.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

Volume

24

Issue

12

fYear

2003

Firstpage

745

Lastpage

747

Abstract

The abnormal corner effects on channel current in nanoscale triple-gate MOSFETs are examined via two-dimensional (2-D) numerical simulations and quasi-2-D analysis. Heavy body doping [for threshold voltage (V/sub t/) control with a polysilicon gate] is found to underlie the effects, which can hence be suppressed, irrespective of the shape of the corners, by leaving the body undoped, and relying on a metal gate with proper work function for V/sub t/ control. Short-channel effects tend to ameliorate the corner effects, but the need for ad hoc suppression remains.

Keywords

MOSFET; Poisson equation; semiconductor device models; semiconductor doping; silicon-on-insulator; work function; MEDICI; Poisson equation; SOI structure; abnormal corner effects suppression; heavy body doping; nanoscale CMOS devices; polysilicon gate; quasi-2-D analysis; short channels; threshold-voltage control; triple-gate MOSFET; two-dimensional numerical simulations; work function; Doping; Electrons; FinFETs; MOSFET circuits; Nanoscale devices; Numerical simulation; Shape control; Threshold voltage; Two dimensional displays; Voltage control;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.820624

Filename

1254605