Title :
Suppression of corner effects in triple-gate MOSFETs
Author :
Fossum, J.G. ; Yang, J.-W. ; Trivedi, V.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
The abnormal corner effects on channel current in nanoscale triple-gate MOSFETs are examined via two-dimensional (2-D) numerical simulations and quasi-2-D analysis. Heavy body doping [for threshold voltage (V/sub t/) control with a polysilicon gate] is found to underlie the effects, which can hence be suppressed, irrespective of the shape of the corners, by leaving the body undoped, and relying on a metal gate with proper work function for V/sub t/ control. Short-channel effects tend to ameliorate the corner effects, but the need for ad hoc suppression remains.
Keywords :
MOSFET; Poisson equation; semiconductor device models; semiconductor doping; silicon-on-insulator; work function; MEDICI; Poisson equation; SOI structure; abnormal corner effects suppression; heavy body doping; nanoscale CMOS devices; polysilicon gate; quasi-2-D analysis; short channels; threshold-voltage control; triple-gate MOSFET; two-dimensional numerical simulations; work function; Doping; Electrons; FinFETs; MOSFET circuits; Nanoscale devices; Numerical simulation; Shape control; Threshold voltage; Two dimensional displays; Voltage control;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.820624
