A Highly Linear Low-Noise Amplifier

Author

Ganesan, Sivakumar ; Sánchez-Sinencio, Edgar ; Silva-Martinez, Jose

Author_Institution

Pulsewave RE Inc., Austin, TX

Volume

54

Issue

12

fYear

2006

Firstpage

4079

Lastpage

4085

Abstract

A low-noise amplifier (LNA) that achieves high third-order input intercept point (IIP3) at RF frequencies using a nonlinearity cancellation technique is proposed. The circuit tackles the problem of the effect of the second-order nonlinearity on IIP3 at RF frequencies. The circuit functionality is analyzed using Volterra series. The linear LNA was designed and fabricated in a TSMC 0.35-mum CMOS process. An IIP3 of +21 dBm was achieved with a gain of 11.5 dB, noise figure of 2.95 dB, and a power consumption of 9 mA at 2.5 V

Keywords

CMOS integrated circuits; Volterra series; low noise amplifiers; 0.35 micron; 11.5 dB; 2.5 V; 2.95 dB; 9 mA; CMOS process; RF frequencies; Volterra series; linear low-noise amplifier; nonlinearity cancellation technique; Circuits; FETs; Interference; Linearity; Linearization techniques; Low-noise amplifiers; Noise figure; Noise measurement; Pulse amplifiers; Radio frequency; Low-noise amplifier (LNA); Volterra series; nonlinearity; third-order input intercept point (IIP3); third-order intermodulation (IM3);

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2006.885889

Filename

4020450