Class-E MOSFET tuned power oscillator design procedure

Author

Kazimierczuk, Marian K. ; Krizhanovski, Vladimir G. ; Rassokhina, Julia V. ; Chernov, Dmitrii V.

Author_Institution

Dept. of Electr. Eng., Wright State Univ., Dayton, OH, USA

Volume

52

Issue

6

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

1138

Lastpage

1147

Abstract

A complete design procedure of a Class-E oscillator for a duty cycle of 0.5 is presented. It is based on an analytical solution of equations, which describe oscillator operation for steady state. General equations for all oscillator component values are given. Using the proposed procedure, the components were calculated for an example oscillator. The oscillator was built and tested using an MTP3055E power MOSFET. The efficiency and output power versus frequency, and the oscillation frequency versus dc supply voltage were measured. At V_DD=4.5 V, the measured oscillation frequency was 800 kHz, the output power was 0.953 W, and the efficiency was 82%.

Keywords

oscillators; power MOSFET; zero voltage switching; 0.953 W; 4.5 V; 800 kHz; MOSFET-tuned power oscillator; MTP3055E; class-E oscillator; duty cycle; positive feedback; power MOSFET; switching-mode operation; zero-voltage switching; Equations; Frequency measurement; MOSFET circuits; Oscillators; Power MOSFET; Power generation; Power measurement; Steady-state; Testing; Voltage; Class-E oscillator; high efficiency; positive feedback; switching-mode operation; zero-voltage switching (ZVS);

fLanguage

English

Journal_Title

Circuits and Systems I: Regular Papers, IEEE Transactions on

Publisher

ieee

ISSN

1549-8328

Type

jour

DOI

10.1109/TCSI.2005.849127

Filename

1440636