DocumentCode :
845313
Title :
Class-E MOSFET tuned power oscillator design procedure
Author :
Kazimierczuk, Marian K. ; Krizhanovski, Vladimir G. ; Rassokhina, Julia V. ; Chernov, Dmitrii V.
Author_Institution :
Dept. of Electr. Eng., Wright State Univ., Dayton, OH, USA
Volume :
52
Issue :
6
fYear :
2005
fDate :
6/1/2005 12:00:00 AM
Firstpage :
1138
Lastpage :
1147
Abstract :
A complete design procedure of a Class-E oscillator for a duty cycle of 0.5 is presented. It is based on an analytical solution of equations, which describe oscillator operation for steady state. General equations for all oscillator component values are given. Using the proposed procedure, the components were calculated for an example oscillator. The oscillator was built and tested using an MTP3055E power MOSFET. The efficiency and output power versus frequency, and the oscillation frequency versus dc supply voltage were measured. At VDD=4.5 V, the measured oscillation frequency was 800 kHz, the output power was 0.953 W, and the efficiency was 82%.
Keywords :
oscillators; power MOSFET; zero voltage switching; 0.953 W; 4.5 V; 800 kHz; MOSFET-tuned power oscillator; MTP3055E; class-E oscillator; duty cycle; positive feedback; power MOSFET; switching-mode operation; zero-voltage switching; Equations; Frequency measurement; MOSFET circuits; Oscillators; Power MOSFET; Power generation; Power measurement; Steady-state; Testing; Voltage; Class-E oscillator; high efficiency; positive feedback; switching-mode operation; zero-voltage switching (ZVS);
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2005.849127
Filename :
1440636
Link To Document :
بازگشت