DocumentCode
84534
Title
Redshift in Absorption Edge of Cd
Co
S Nanofilms
Author
Kumar, Sudhakar ; Sharma, Parmanand ; Sharma, Vishal
Author_Institution
Dept. of Phys. & Mater. Sci., Jaypee Univ. of Inf. Technol., Solan, India
Volume
13
Issue
2
fYear
2014
fDate
Mar-14
Firstpage
343
Lastpage
348
Abstract
Cd1-xCoxS nanofilms (0 ≤ x ≤ 0.08) deposited by chemical bath deposition have been studied using energy dispersive X-ray spectroscopy, Fourier transform infrared spectroscopy, scanning electron microscopy, and ultraviolet-visible-near-infrared spectroscopy. A redshift in Cd-S stretch with Co doping has been observed. The incorporation of Co2+ ions in CdS lattice deteriorates the large crystallites with an increase in grain boundaries. A redshift in absorption edge has also been observed with Co concentration. This shift may be explained on the basis of band tailing due to creation of defect states. The optical behavior of Cd1-xCoxS nanofilms has been analyzed in term of Tauc model, Urbach-Martienssen model, and Vegard´s law.
Keywords
Fourier transform spectra; II-VI semiconductors; X-ray chemical analysis; cadmium compounds; cobalt compounds; crystallites; defect states; grain boundaries; infrared spectra; liquid phase deposition; nanostructured materials; red shift; semiconductor doping; semiconductor growth; semiconductor thin films; ultraviolet spectra; visible spectra; wide band gap semiconductors; Cd1-xCoxS; Fourier transform infrared spectroscopy; Tauc model; Urbach-Martienssen model; Vegard law; absorption edge; band tailing; chemical bath deposition; crystallites; defect states; doping; energy dispersive X-ray spectroscopy; grain boundaries; nanofilms; optical behavior; redshift; scanning electron microscopy; ultraviolet-visible-near-infrared spectroscopy; Absorption; Ions; Lattices; Optical films; Particle beam optics; Photonic band gap; Fourier transform infrared spectroscopy (FTIR); nanofilm; scanning electron microscope (SEM); ultraviolet-visible-near-infrared spectroscopy (UV-visible-NIR);
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2014.2303200
Filename
6729137
Link To Document