An SiC MESFET-Based MMIC Process

Author

Südow, Mattias ; Andersson, Kristoffer ; Billström, Niklas ; Grahn, Jan ; Hjelmgren, Hans ; Nilsson, Joakim ; Nilsson, Per-Åke ; Ståhl, Johan ; Zirath, Herbert ; Rorsman, Niklas

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg

Volume

54

Issue

12

fYear

2006

Firstpage

4072

Lastpage

4078

Abstract

A monolithic microwave integrated circuit (MMIC) process based on an in-house SiC MESFET technology has been developed. The process uses microstrip technology, and a complete set of passive components, including MIM capacitors, spiral inductors, thin-film resistors, and via-holes, has been developed. The potential of the process is demonstrated by an 8-W power amplifier at 3 GHz, a high-linearity S-band mixer showing a third-order intercept point of 38 dBm, and a high-power limiter

Keywords

MMIC; Schottky gate field effect transistors; capacitors; inductors; silicon compounds; thin film resistors; wide band gap semiconductors; 3 GHz; 8 W; MESFET-based MMIC process; MIM capacitors; SiC; high-linearity S-band mixer; high-power limiter; microstrip technology; monolithic microwave integrated circuit; passive components; power amplifier; spiral inductors; thin-film resistors; via-holes; Integrated circuit technology; MESFET integrated circuits; MIM capacitors; MMICs; Microstrip components; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits; Silicon carbide; Thin film inductors; $S$-band; High power; SiC MESFET; SiC monolithic microwave integrated circuit (MMIC);

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2006.885563

Filename

4020489