Title :
An SiC MESFET-Based MMIC Process
Author :
Südow, Mattias ; Andersson, Kristoffer ; Billström, Niklas ; Grahn, Jan ; Hjelmgren, Hans ; Nilsson, Joakim ; Nilsson, Per-Åke ; Ståhl, Johan ; Zirath, Herbert ; Rorsman, Niklas
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg
Abstract :
A monolithic microwave integrated circuit (MMIC) process based on an in-house SiC MESFET technology has been developed. The process uses microstrip technology, and a complete set of passive components, including MIM capacitors, spiral inductors, thin-film resistors, and via-holes, has been developed. The potential of the process is demonstrated by an 8-W power amplifier at 3 GHz, a high-linearity S-band mixer showing a third-order intercept point of 38 dBm, and a high-power limiter
Keywords :
MMIC; Schottky gate field effect transistors; capacitors; inductors; silicon compounds; thin film resistors; wide band gap semiconductors; 3 GHz; 8 W; MESFET-based MMIC process; MIM capacitors; SiC; high-linearity S-band mixer; high-power limiter; microstrip technology; monolithic microwave integrated circuit; passive components; power amplifier; spiral inductors; thin-film resistors; via-holes; Integrated circuit technology; MESFET integrated circuits; MIM capacitors; MMICs; Microstrip components; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits; Silicon carbide; Thin film inductors; $S$-band; High power; SiC MESFET; SiC monolithic microwave integrated circuit (MMIC);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2006.885563
