• DocumentCode
    845535
  • Title

    A Distortion-Cancelled Doherty High-Power Amplifier Using 28-V GaAs Heterojunction FETs for W-CDMA Base Stations

  • Author

    Takenaka, Isao ; Ishikura, Kohji ; Takahashi, Hidemasa ; Hasegawa, Kouichi ; Ueda, Takashi ; Kurihara, Toshimichi ; Asano, Kazunori ; Iwata, Naotaka

  • Author_Institution
    NEC Electron. Corp., Shiga
  • Volume
    54
  • Issue
    12
  • fYear
    2006
  • Firstpage
    4513
  • Lastpage
    4521
  • Abstract
    An L/S-band 330-W distortion-cancelled Doherty GaAs field-effect transistor (FET) amplifier has been successfully developed optimizing the main and peak amplifiers load impedance shift. The amplifier employed a pair of 28-V operation 150-W GaAs heterojunction FETs. It demonstrated low third-order intermodulation of -37 dBc with a drain efficiency of 42% at an output power of 49 dBm around 6-dB backoff level under the two-carrier wideband code-division multiple-access (W-CDMA) signals of 2.135 and 2.145 GHz. To our knowledge, these represent the best results ever reported among the simple high-power FET amplifiers for W-CDMA base stations. In addition, we proposed the evaluation techniques to obtain each AM-AM and AM-PM characteristics of the main and peak amplifiers in an operating Doherty amplifier, and have experimentally proven the distortion cancellation effect in the GaAs FET Doherty amplifier
  • Keywords
    III-V semiconductors; UHF power amplifiers; code division multiple access; field effect transistor circuits; gallium compounds; microwave power amplifiers; 150 W; 2.135 GHz; 2.145 GHz; 28 V; 330 W; FET Doherty amplifier; GaAs; L band; S band; W-CDMA base stations; distortion cancellation effect; high-power amplifiers; third-order intermodulation; Base stations; Broadband amplifiers; FETs; Gallium arsenide; Heterojunctions; High power amplifiers; Impedance; Multiaccess communication; Operational amplifiers; Power generation; Distortion cancellation; Doherty amplifier; efficiency; heterojunction field-effect transistors (HFETs); high power; wideband code division multiple access (W-CDMA);
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2006.883606
  • Filename
    4020491