Title :
Negative differential resistance in InAs/GaSb single-barrier heterostructures
Author :
Taira, K. ; Hase, I. ; Hawai, H.
Author_Institution :
Sony Corp. Res. Center, Yokohama, Japan
Abstract :
The authors report the first observation of negative differential resistance (NDR) at room temperature in InAs/GaSb barrier heterostructures, where the conduction band in InAs lies below the GaSb valence band.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; negative resistance; p-n heterojunctions; III-V semiconductors; InAs-GaSb; NDR; conduction band; negative differential resistance; p-n junctions; room temperature; single-barrier heterostructures; valence band;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891142
