Rollable Silicon IC Wafers Achieved by Backside Nanotexturing

Author

Kashyap, Kunal ; Long-Chia Zheng ; Dong-Yan Lai ; Hou, Max T. ; Yeh, J. Andrew

Author_Institution

Inst. of Nanoengineering & Microsyst., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

36

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

829

Lastpage

831

Abstract

This letter presents a wafer-level approach for producing rollable single-crystal silicon integrated circuit (IC) wafers, bent with a 17-mm minimum radius of curvature, achieved by backside nanotexturing. The three-point bending test indicates a mechanical strength enhancement by a factor of 2.3 for nanotextured 60-μm thick samples. The minimum radius of curvature decreased by 43.4%, exhibiting improved flexibility. The carrier charge mobility increases by 4.9%, 12.6%, and 16.9% for the bending radii of 45, 30, and 24 mm, respectively. The increment of the mobility corresponds with the changing compressive stress in p-MOSFETs fabricated on the IC wafer.

Keywords

MOSFET; carrier mobility; elemental semiconductors; flexible electronics; integrated circuit manufacture; semiconductor technology; silicon; Si; backside nanotexturing; carrier charge mobility; p-MOSFET; rollable silicon IC wafers; rollable single-crystal silicon integrated circuit wafers; size 17 mm; size 24 mm; size 30 mm; size 45 mm; size 60 mum; wafer-level approach; Compressive stress; Integrated circuits; MOSFET circuits; Nanoscale devices; Performance evaluation; Silicon; Substrates; Carrier charge mobility; Flexible silicon ICs; carrier charge mobility; mechanical strength; p-MOSFETs; silicon nanotextures;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2439701

Filename

7115906