• DocumentCode
    846214
  • Title

    Raman characterisation of stress in recrystallised silicon-on-insulator

  • Author

    Peiyi Chen ; Zhijian Li

  • Volume
    24
  • Issue
    23
  • fYear
    1988
  • fDate
    11/10/1988 12:00:00 AM
  • Firstpage
    1420
  • Lastpage
    1422
  • Abstract
    Raman scattering measurements were carried out to characterise Si films deposited on SiO2-coated Si substrates and recrystallised by a graphite strip heater or Ar+ ion laser. The frequency downshifts of the Raman peaks demonstrate that the Si films are under tensile stress. The crystallinity of the recrystallised films is also discussed
  • Keywords
    Raman spectra of inorganic solids; elemental semiconductors; recrystallisation; semiconductor thin films; semiconductor-insulator boundaries; silicon; spectral line shift; stress effects; Ar+ ion laser; Raman peaks; Raman scattering measurements; Si-SiO2; crystallinity; elemental semiconductors; frequency downshifts; graphite strip heater; recrystallised films; tensile stress;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    46081
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=846214