Title :
40-Gb/s wide-band MMIC pHEMT modulator driver amplifiers designed with the real frequency technique
Author :
Kerhervé, Eric ; Moreira, Cristian Pavao ; Jarry, Pierre ; Courcelle, Laurent
Author_Institution :
IXL Lab. of Microelectron., Univ. of Bordeaux, Talence, France
fDate :
6/1/2005 12:00:00 AM
Abstract :
With the use GaAs pseudomorphic high electron-mobility transistor technology, the bandwidth performances of Cherry-Hooper driver amplifiers need to be improved. To fulfill these requirements, we propose an original driver circuit topology dedicated to 40-Gb/s optical communication systems. To flatten the transducer gain response of the circuit, passive networks have been added in the design. These networks have been optimized by means of the real frequency technique (RFT). A modified procedure of the classical RFT is introduced to perform the optimization in the presence of an overall resistive feedback.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; driver circuits; gallium arsenide; network topology; optical communication equipment; passive networks; wideband amplifiers; 40 Gbit/s; Cherry-Hooper driver amplifiers; GaAs; driver circuit topology; monolithic microwave integrated circuit; optical communication systems; pHEMT technology; passive networks; pseudomorphic high electron-mobility transistor; real frequency technique; resistive feedback; transducer gain response; wide-band MMIC pHEMT modulator driver amplifiers; Bandwidth; Broadband amplifiers; Circuit topology; Driver circuits; Frequency; Gallium arsenide; MMICs; Network topology; Optical amplifiers; PHEMTs; Driver amplifier; monolithic microwave integrated circuit (MMIC); real frequency technique (RFT); wide-band;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2005.848804
