Title :
GaAs capacitively coupled domino logic gate
Author :
Hoe, D.H.K. ; Salama, C.A.T.
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Abstract :
A novel GaAs capacitively coupled domino logic (CCDL) gate is proposed. Derived from capacitor-coupled logic, this domino gate offers complex gate design capability with relatively low power dissipation and high speed, making it suitable for VLSI implementations.
Keywords :
III-V semiconductors; VLSI; gallium arsenide; integrated logic circuits; logic design; logic gates; GaAs; III-V semiconductors; VLSI implementations; capacitively coupled; complex gate design capability; domino logic gate; high speed; low power dissipation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891146
