DocumentCode
84640
Title
GaN-Based
-Wave Sensors on Silicon for Chemical and Biological Sensing in Liquid Environments
Author
Xing Lu ; Chi Ming Lee ; Shu Yuen Wu ; Ho Pui Ho ; Kei May Lau
Author_Institution
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Volume
13
Issue
4
fYear
2013
fDate
Apr-13
Firstpage
1245
Lastpage
1251
Abstract
In this paper, we successfully developed Lamb-wave sensors in a two-port delay line topology with suspending GaN thin films on silicon substrates. The liquid insusceptibility of the lowest order symmetric mode (S0) Lamb wave was experimentally investigated, and the relative frequency shift to water loading of the two-port S0-wave sensors was found to be as small as 0.12%. Our GaN-on-Si sensors, exhibiting a high mass sensitivity (272 cm2/g) and a sharp signal response at a low concentration (1 μg/mL) of anti-bovine serum albumin, were demonstrated to be suitable for chemical and biological sensing in liquid environments. In addition, the small size of the sensors and their potential to be integrated with a wide range of GaN-based devices allow for a robust, low-cost miniature sensing system to be manufactured with GaN-on-Si substrates.
Keywords
III-V semiconductors; biosensors; chemical sensors; delay lines; elemental semiconductors; gallium compounds; silicon; surface acoustic wave sensors; thin film sensors; wide band gap semiconductors; GaN-Si; GaN-on-Si sensor; Si; antibovine serum albumin; biological sensing; chemical sensing; lamb-wave sensor; liquid insusceptibility environment; lowest order symmetric mode; silicon substrate; thin film; two-port S0-wave sensor; two-port delay line topology; water loading; Biology; Liquids; Resonant frequency; Sensitivity; Sensors; Silicon; Substrates; Bio-sensor; GaN; high mass sensitivity; lamb wave;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2012.2231958
Filename
6374634
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