Title :
A Physical and SPICE Mobility Degradation Analysis for NBTI
Author :
Chaudhary, Arun ; Mahapatra, Santanu
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India
Abstract :
The importance of mobility degradation (Δμeff) due to Negative Bias Temperature Instability (NBTI) stress is studied for precise modeling of p-MOSFET drain current degradation (ΔID). An improvement to the SPICE mobility model is presented to incorporate Δμeff , and the modified model is validated against experimental ΔID and transconductance degradation (Δgm) over time, in the subthreshold to strong inversion region, across different SiON and high-k metal gate (HKMG) devices. To gain further insight into NBTI mobility degradation, the well-known physics-based mobility model consisting of three scattering components is revalidated across different devices. This analysis is beneficial for device and circuit simulations in Technology CAD and SPICE environments, respectively, for different process technologies.
Keywords :
MOSFET; SPICE; high-k dielectric thin films; semiconductor device models; silicon compounds; technology CAD (electronics); HKMG devices; NBTI mobility degradation; NBTI stress; SPICE environments; SPICE mobility degradation analysis; SPICE mobility model; SiON; circuit simulations; high-k metal gate devices; inversion region; negative bias temperature instability stress; p-MOSFET drain current degradation modeling; physics-based mobility model; scattering components; technology CAD; transconductance degradation; Mathiessen´s rule; SPICE; mobility degradation; negative bias temperature instability (NBTI); threshold voltage degradation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2259493
