DocumentCode :
846467
Title :
Novel multimode J-pHEMT front-end architecture with power-control scheme for maximum efficiency
Author :
Clifton, John Christopher ; Albasha, Lutfi ; Lawrenson, Alan ; Eaton, Anthony M.
Author_Institution :
Sony Semicond. & Electron. Solutions, Basingstoke, UK
Volume :
53
Issue :
6
fYear :
2005
fDate :
6/1/2005 12:00:00 AM
Firstpage :
2251
Lastpage :
2258
Abstract :
Based upon a unique junction pseudomorphic high electron-mobility transistor (J-pHEMT) device, a novel method of providing high-efficiency power amplifier (PA) power control for variable envelope modulation schemes is demonstrated for enhanced data rates for global system for mobile communications evolution and wide-band code division multiple access. This new technique, based upon the use of a linear PA, was extended to provide a simple, but highly effective method of PA efficiency enhancement based upon dynamic adaptive bias control. Together, the architecture allows for substantially higher efficiency levels compared with conventional linear solutions over the entire range of handset operating conditions, while avoiding the necessity for complex control loops and linearization schemes. Furthermore, it is shown that the characteristics of the J-pHEMT, when used with this architecture, can be exploited to facilitate an efficient and completely novel single-chip PA plus antenna switch to substantially reduce the RF complexity of a cellular handset.
Keywords :
3G mobile communication; HEMT integrated circuits; MMIC power amplifiers; cellular radio; data communication; mobile handsets; power control; EDGE; GSM; J-pHEMT device; RF complexity; cellular handset; dynamic adaptive bias control; envelope tracking; handset operating condition; junction pseudomorphic high electron-mobility transistor; linear power amplifier; mobile communications; monolithic microwave integrated circuit; multimode J-pHEMT front-end architecture; power control scheme; variable envelope modulation; wide-band code division multiple access; Broadband amplifiers; GSM; High power amplifiers; Modulation coding; Multiaccess communication; PHEMTs; Power control; Switches; Telephone sets; Transistors; Adaptive bias control; enhanced data rates for global system for mobile communications (GSM) evolution (EDGE); envelope tracking; monolithic microwave integrated circuit (MMIC) power amplifiers (PAs); power control; pseudomorphic high electron-mobility transistor (pHEMT);
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2005.848747
Filename :
1440747
Link To Document :
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