DocumentCode
846480
Title
Control of gate leakage in AlInAs-insulator HIGFETs
Author
Newson, D.J. ; Merrett, R.P. ; Lee, Minhung ; Scott, E.G.
Author_Institution
British Telecom Res. Labs., Ipswich, UK
Volume
25
Issue
25
fYear
1989
Firstpage
1728
Lastpage
1729
Abstract
By proper optimisation of the channel, the gate leakage of 1 mu m gate-length GaInAs HIGFETs has been reduced to below 10 nA/mm. This has been achieved in a delta-doped structure in which Zener tunnelling is inoperative.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; semiconductor doping; 1 micron; GaInAs-AlInAs; HIGFETs; Zener tunnelling; channel; delta-doped structure; gate leakage; optimisation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19891156
Filename
41995
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