High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 mu m

Author

Thijs, P.J.A.

Author_Institution

Philips Res. Labs., Eindhoven, Netherlands

Volume

25

Issue

25

fYear

1989

Firstpage

1735

Lastpage

1737

Abstract

Buried heterostructure Ga_0.2In_0.8As strained-layer (strain 1.8%) separate confinement, multiple quantum well laser diodes emitting at 1.5 mu m were fabricated by hybrid LPMOVPE/LPE. Improved performance as a result of the application of a strained-layer active region is demonstrated for the first time. A CW threshold current of 10 mA, differential quantum efficiency of 82%, T₀ of 97 K and maximum output powers/facet as high as 70 mW CW and 180 mW for pulsed operation were measured. Lifetests at 60 degrees C heat-sink temperature and 5 mW output power show almost no degradation after 2000h.

Keywords

gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.5 micron; 10 mA; 180 mW; 2000 h; 5 mW; 60 degC; 70 mW; 97 K; CW threshold current; GaInAs; heat-sink temperature; hybrid LPMOVPE/LPE; maximum output powers/facet; modulation doped; multiple quantum well laser; output power; pulsed operation; quantum efficiency; strained-layer active region; strained-layer quantum well laser diodes;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19891161

Filename

42000