• DocumentCode
    846789
  • Title

    Differential read-out architecture for CMOS ISFET microsystems

  • Author

    Chodavarapu, V.P. ; Titus, A.H. ; Cartwright, A.N.

  • Author_Institution
    Dept. of Electr. Eng., State Univ. of New York, Buffalo, NY, USA
  • Volume
    41
  • Issue
    12
  • fYear
    2005
  • fDate
    6/9/2005 12:00:00 AM
  • Firstpage
    698
  • Lastpage
    699
  • Abstract
    The operation of a pH (H+ ion concentration) sensitive ion-sensitive field-effect transistor (ISFET) microsystem with a sensitivity of 40-45 mV/pH is demonstrated. This system has two identical ISFETs as the inputs to a pair of ISFET operational transconductance amplifiers (IOTAs) arranged in a novel differential architecture. The IOTAs have different sized p-MOSFET load transistors that enable pH sensitive operation without any post-fabrication processing or material deposition. The CMOS ISFET chip is fabricated in an unmodified 1.5 μm commercial process.
  • Keywords
    CMOS integrated circuits; ion sensitive field effect transistors; operational amplifiers; pH measurement; readout electronics; 1.5 micron; CMOS ISFET microsystems; ISFET operational transconductance amplifiers; differential architecture; differential read-out architecture; load transistors; material deposition; p-MOSFET; pH sensitive ion-sensitive field-effect transistor; post-fabrication processing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20051044
  • Filename
    1441118